| 摘要 |
A high-voltage integrated driver circuit for driving the word lines of a digital computer memory array of floating-gate avalanche-injection transistor memory cells, and for other applications where a high driving voltage is required. The disclosed driver circuit comprises a field-effect output transistor having a source electrode connected to a respective word line, a drain electrode adapted to have a chip select pulse signal applied thereto, and a gate electrode connected to selectably operable circuitry which may be conditioned either to a first state for clamping the voltage of the gate to cut off the output transistor and thereby maintain the output and the word line at a first voltage level, or to a second state for unclamping the voltage of the gate of the output transistor to permit the voltage of the output and the respective word line to swing with a high amplitude so as to cause the selected memory cell transistor to go into avalanche breakdown and thereby charge its floating gate so as to store a bit of information in the selected cell.
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