Production of a floating gate in a semiconductor component comprises forming a tunnel oxide layer, a polycrystalline silicon layer, an intermediate layer and a silicon nitride layer on a semiconductor substrate, and structuring

摘要

Production of a floating gate in a semiconductor component comprises sequentially forming a tunnel oxide layer, a polycrystalline silicon layer, an intermediate layer and a silicon nitride layer on a semiconductor substrate, and structuring by etching the layers. Production of a floating gate in a semiconductor component comprises sequentially forming a tunnel oxide layer (620) a polycrystalline silicon layer (630), an intermediate layer (640) and a silicon nitride layer on a semiconductor substrate (600) with insulation layers (610); etching the nitride layer to form layer structures; etching the intermediate oxide layer using the layer structures as masks to expose the surface of the silicon layer and form a number of intermediate oxide layer structures (642); forming side wall distance spacers (660) on the side walls of the silicon nitride layer structures and the intermediate oxide layer structures; producing a mask layer (670) on the region of the exposed surface of the silicon layer; removing the silicon nitride layer structures and the side wall distance spacers; and etching the silicon layer using the intermediate oxide layer structures and the mask layer as masks to expose the insulating regions.