发明名称 MASK CONFIGURABLE SMART POWER CIRCUITS - APPLICATIONS AND GS-NMOS DEVICES
摘要 A mask-configurable smart power integrated circuit includes arrays of associated NMOS FETs that perform functions such as control, amplification and sampling of output variables. The arrays include NMOS basic cells using FET arrangements such as LDD, LDSD-NMOS, LDMOS, or N-channel DMOS. The smart power integrated circuits are useful to provide switching to power cells and drives, and protection from overload conditions.
申请公布号 WO0067377(A2) 申请公布日期 2000.11.09
申请号 WO2000PT00003 申请日期 2000.04.28
申请人 INSTITUTO SUPERIOR TECNICO;FUNDACAO CENTRO TECNOLOGICO PARA A INFORMATICA;CASTRO SIMAS, MARIA INES;FINCO, SAULO;PEDRO CASIMIRO, ANTONIO;MENDONCA SANTOS, PEDRO;BEHRENS, FRANK, HERMAN;MAMMANA, CARLOS, I. Z. 发明人 CASTRO SIMAS, MARIA INES;FINCO, SAULO;PEDRO CASIMIRO, ANTONIO;MENDONCA SANTOS, PEDRO;BEHRENS, FRANK, HERMAN;MAMMANA, CARLOS, I. Z.
分类号 H01L21/822;H01L21/8234;H01L27/02;H01L27/04;H01L27/06;H01L27/088;H01L29/423;H03K19/0185;(IPC1-7):H03K/ 主分类号 H01L21/822
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