发明名称 |
Integrated circuit inductor structure and non-destructive etch depth measurement |
摘要 |
A method for forming an electrical device structure in an integrated circuit comprises providing a substrate; forming a passivation layer thereon; forming a plurality of through holes in the passivation layer, the through holes; removing substrate material under the passivation layer by means of isotropic etching, thus forming at least a first cavity in the substrate beneath the plurality of through holes; forming a dielectric layer on top of the passivation layer to plug the through holes, thereby creating a membrane; and creating an electrical device, such as e.g. an inductor, above the membrane. |
申请公布号 |
SE0004095(D0) |
申请公布日期 |
2000.11.09 |
申请号 |
SE20000004095 |
申请日期 |
2000.11.09 |
申请人 |
TELEFONAKTIEBOLAGET L M ERICSSON |
发明人 |
HANS *NORSTROEM;CARL *BJOERMANDER;TED *JOHANSSON |
分类号 |
H01F17/00;H01F41/04;H01L23/522;H01L27/08;(IPC1-7):H01L/ |
主分类号 |
H01F17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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