发明名称 Preparation process of semiconductor wafer using a protective adhesive tape
摘要 An object of the invention is to provide a preparation process of a semiconductor wafer, in which breakage of the wafer on grinding the back surface of the wafer and on peeling the adhesive tape is prevented, and the operation time can be reduced. The preparation process of a semiconductor wafer comprises the steps of: adhering an adhesive tape on a front surface of a semiconductor wafer; grinding a back surface of the semiconductor wafer by a grinding machine; peeling the adhesive tape; and cleaning the front surface of the semiconductor wafer, wherein an adhesive tape having heat shrinkability is used as the adhesive tape, and after grinding the back surface of the semiconductor wafer, warm water at a temperature of from 50 to 99 DEG C is poured to peel the adhesive tape in a wafer cleaning machine, and the front surface of the semiconductor wafer is cleaned in the wafer cleaning machine.
申请公布号 EP0951056(A3) 申请公布日期 2000.11.08
申请号 EP19990107107 申请日期 1999.04.12
申请人 MITSUI CHEMICALS, INC. 发明人 KATAOKA, MAKOTO;FUJII, YASUHISA;HIRAI, KENTARO;FUKUMOTO, HIDEKI;KUMAGAI, MASATOSHI
分类号 H01L21/304;H01L21/68;(IPC1-7):H01L21/302 主分类号 H01L21/304
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