发明名称 |
Method for forming a copper layer over a semiconductor wafer |
摘要 |
<p>A method for electroplating a copper layer (118) over a wafer (20) powers a cathode of an electroplating system (10) in a manner that obtains improved copper interconnects. A control system (34) powers the cathode of the system (10) with a mix of two or more of: (i) positive low-powered DC cycles (201 or 254); (ii) positive high-powered DC cycles (256 or 310); (iii) low-powered, pulsed, positive-power cycles (306 or 530); (iv) high-powered, pulsed, positive-powered cycles (212, 252, 302, or 352); and/or (v) negative pulsed cycles (214, 304, 510, 528, or 532). The collection of these cycles functions to electroplate copper or a like metal (118) onto the wafer (20). During electroplating, insitu process control and/or endpointing (506, 512, or 520) is performed to further improve the resulting copper interconnect. <IMAGE></p> |
申请公布号 |
EP1050902(A2) |
申请公布日期 |
2000.11.08 |
申请号 |
EP20000109329 |
申请日期 |
2000.05.02 |
申请人 |
MOTOROLA, INC. |
发明人 |
SIMPSON, CINDY REIDSEMA;MIKKOLA, ROBERT DOUGLAS;HERRICK, MATTHEW T.;BAKER, BRETT CAROLINE;PENA, DAVID MORALEZ;ACOUSTA, EDWARD;CHOWDHURY, RINA;AZRAK, MARIJEAN;GOLDBERG, CINDY KAY;ISLAM, MOHAMMED RABIUL |
分类号 |
H01L21/288;C25D5/18;C25D7/12;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/288 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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