Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film

摘要

A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si-C) bond. During the deposition process the wafer is heated to a temperature less than 250°C and preferably to a temperature between 100-200°C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer.