发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device includes a substrate, a multi-layer structure provided on the substrate, a first-conductive-type etch stop layer of a III nitride provided on the multi-layer structure, and a second-conductive-type first semiconductor layer of a III nitride provided on the etch stop layer. A molar fraction of Al is lower in a composition of the III nitride included in the first semiconductor layer than in a composition of the III nitride included in the etch stop layer. <IMAGE> |
申请公布号 |
EP0997996(A3) |
申请公布日期 |
2000.11.08 |
申请号 |
EP19990120838 |
申请日期 |
1999.10.25 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
NAKAMURA, SHINJI;YURI, MASAAKI;ORITA, KENJI |
分类号 |
H01S5/30;H01L33/00;H01L33/06;H01L33/14;H01L33/32;H01S5/323;H01S5/343 |
主分类号 |
H01S5/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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