| 摘要 |
PROBLEM TO BE SOLVED: To uniformly implant ions in a region near to the surface of a sample. SOLUTION: In this ion implantation method using this ion implantation device provided with an extraction electrode 2 and a post-accelerator 5, ions are implanted in a shallow region near to the surface of a sample 9 by setting the application voltage to the post-accelerator 5 higher than that of the extraction electrode 2. In this case, when it is assumed that the maximum current density in an ion beam comprising ions accelerated by the electrodes of the post-accelerator 5 is Dmax, the current amount of the ion beam is I, the width of the ion beam is W, and the average current density expressed by I/W2 isρ, a relationship ofρ>=Dmax/2 should be preferably satisfied.
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