发明名称 |
Semiconductor substrate and method of manufacturing the same |
摘要 |
A manufacturing method excellent in controllability, productivity and economics of a high-quality SOI wafer and a wafer manufactured by that method are provided. After wafer bonding, separation is made on an interface of a high porosity layer in a porous region including a low porosity layer and the high porosity layer in a surface formed on a main surface side of a first Si substrate 2 to transfer a non-porous layer onto a second substrate. After separation at the high porosity layer, a residual low porosity thin layer is made non-porous by a smoothing process such as hydrogen annealing without using selective etching.
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申请公布号 |
US6143628(A) |
申请公布日期 |
2000.11.07 |
申请号 |
US19980047326 |
申请日期 |
1998.03.25 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SATO, NOBUHIKO;YONEHARA, TAKAO;SAKAGUCHI, KIYOFUMI |
分类号 |
H01L21/20;(IPC1-7):H01L21/30;H01L21/46 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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