发明名称 Method of reacting excess CVD gas reactant
摘要 Method and apparatus for controlling deposition from excess gaseous reactant in an exhaust conduit of a chemical vapor deposition apparatus involves introducing a gaseous chemical reactant in the exhaust stream effective to react with the excess gaseous reactant in the exhaust stream to form solid reaction product particulates in a manner that reduces harmful deposition of liquid and/or solid metal in the exhaust system.
申请公布号 US6143361(A) 申请公布日期 2000.11.07
申请号 US19980175067 申请日期 1998.10.19
申请人 HOWMET RESEARCH CORPORATION 发明人 NEAR, DANIEL L.;WARNES, BRUCE M.;WINTERS, STEPHEN M.
分类号 C23C16/44;H01L21/285;(IPC1-7):C23C16/08 主分类号 C23C16/44
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