发明名称 |
Method of reacting excess CVD gas reactant |
摘要 |
Method and apparatus for controlling deposition from excess gaseous reactant in an exhaust conduit of a chemical vapor deposition apparatus involves introducing a gaseous chemical reactant in the exhaust stream effective to react with the excess gaseous reactant in the exhaust stream to form solid reaction product particulates in a manner that reduces harmful deposition of liquid and/or solid metal in the exhaust system.
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申请公布号 |
US6143361(A) |
申请公布日期 |
2000.11.07 |
申请号 |
US19980175067 |
申请日期 |
1998.10.19 |
申请人 |
HOWMET RESEARCH CORPORATION |
发明人 |
NEAR, DANIEL L.;WARNES, BRUCE M.;WINTERS, STEPHEN M. |
分类号 |
C23C16/44;H01L21/285;(IPC1-7):C23C16/08 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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