发明名称 ELECTROOPTICAL DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To realize a multilevel display with not less than 256 multilevel display by conducting multilevel display employing a pure digital control only without adding analog signals. SOLUTION: The device has complementary type thin film transistors made up with P and N channel type thin film transistors. The device has a semiconductor layer, which has a channel forming region and an impurity region, a gate insulating film, which is formed on the semiconductor film, and a gate electrode which is provided through the gate insulating film. The impurity region is overlapped with the gate electrode through a gate insulating film. Pulses applied to the source or the drain of the P channel type thin film transistor have an opposite phase with respect to the pulses applied to the drain or the source of the N channel type thin film transistor.</p>
申请公布号 JP2000310950(A) 申请公布日期 2000.11.07
申请号 JP20000074651 申请日期 2000.03.16
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;MASE AKIRA;HIROKI MASAAKI;TAKEMURA YASUHIKO
分类号 G02F1/136;G02F1/133;G02F1/1368;G09F9/00;G09F9/30;G09F9/35;H01L29/786;(IPC1-7):G09F9/00 主分类号 G02F1/136
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