发明名称 |
Reference voltage generating circuit having a temperature characteristic correction circuit providing low temperature sensitivity to a reference voltage |
摘要 |
A reference voltage generating circuit generates a reference voltage having a flat temperature characteristic over a practical temperature range. In a reference voltage transistor pair, a depletion N-channel field effect transistor and an enhancement N-channel field effect transistor are connected in series between a first voltage source and a second voltage source so that the reference voltage is output from a juncture between a gate of the depletion N-channel field effect transistor and a gate of the enhancement N-channel field effect transistor. A temperature characteristic correction circuit is provided to at least one of the depletion N-channel field effect transistor and the enhancement N-channel field effect transistor. The temperature characteristic correction circuit changes temperature sensitivity of the reference voltage by changing an effective gate size of the one of the depletion N-channel field effect transistor and the enhancement N-channel field effect transistor.
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申请公布号 |
US6144248(A) |
申请公布日期 |
2000.11.07 |
申请号 |
US19990354920 |
申请日期 |
1999.07.13 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
OOSUGI, TOSHIO;FUJIWARA, AKIHIKO |
分类号 |
G05F3/24;(IPC1-7):H01H37/76 |
主分类号 |
G05F3/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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