发明名称 Reference voltage generating circuit having a temperature characteristic correction circuit providing low temperature sensitivity to a reference voltage
摘要 A reference voltage generating circuit generates a reference voltage having a flat temperature characteristic over a practical temperature range. In a reference voltage transistor pair, a depletion N-channel field effect transistor and an enhancement N-channel field effect transistor are connected in series between a first voltage source and a second voltage source so that the reference voltage is output from a juncture between a gate of the depletion N-channel field effect transistor and a gate of the enhancement N-channel field effect transistor. A temperature characteristic correction circuit is provided to at least one of the depletion N-channel field effect transistor and the enhancement N-channel field effect transistor. The temperature characteristic correction circuit changes temperature sensitivity of the reference voltage by changing an effective gate size of the one of the depletion N-channel field effect transistor and the enhancement N-channel field effect transistor.
申请公布号 US6144248(A) 申请公布日期 2000.11.07
申请号 US19990354920 申请日期 1999.07.13
申请人 RICOH COMPANY, LTD. 发明人 OOSUGI, TOSHIO;FUJIWARA, AKIHIKO
分类号 G05F3/24;(IPC1-7):H01H37/76 主分类号 G05F3/24
代理机构 代理人
主权项
地址