发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
In a semiconductor device, a plurality of MIS transistors of the same conductivity type having different thresholds are formed at a main surface of semiconductor substrate, and impurity profiles on section extending in a depth direction from the main surface of the semiconductor substrate through respective channel regions of the plurality of MIS transistors have peaks located at different depths. This structure is formed by ion implantation performed on the respective channel regions with different implanting energies or different ion species. According to this semiconductor device, the thresholds of the MIS transistors can be individually controlled, and transistor characteristics optimum for uses can be obtained.
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申请公布号 |
US6144079(A) |
申请公布日期 |
2000.11.07 |
申请号 |
US19960725386 |
申请日期 |
1996.10.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SHIRAHATA, MASAYOSHI;OKUMURA, YOSHINORI |
分类号 |
H01L21/336;H01L21/265;H01L21/74;H01L21/8238;H01L27/088;H01L27/092;H01L29/10;H01L29/78;(IPC1-7):H01L31/119;H01L27/119;H01L29/76;H01L27/108 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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