Dual in-laid integrated circuit structure with selectively positioned low-K dielectric isolation and method of formation

摘要

A method for forming a dual inlaid contact structure (damascene) begins by etching dual inlaid contact structures (32, 34, and 36). Masking layers (28) are (228) and the deposition of low-K dielectric material 26 is used to selectively form low-K regions (30) only in critical areas where low-K dielectric material is absolutely needed. Other portions of the wafer remain covered with conventional oxide (24) so that adverse impacts of low-K dielectric material is minimized. Conductive material (38, 40, and 42) is then formed to complete dual inlaid contact structures whereby low-K dielectric plugs (30) reduce cross talk and capacitance within the final structure.