Method for manufacturing semiconductor device and semiconductor device manufacturing apparatus

摘要

A method of manufacturing a semiconductor device contains a first treatment step of removing a silicon oxide film on a semiconductor substrate (15) in a rare hydrofluoric acid treatment device (12), a second treatment step of forming hemispherical grained silicon on the semiconductor substrate (15) in an HSG-Si forming device (13), and a step of moving the semiconductor substrate (15) treated in the first treatment step to the HSG-Si forming device (13) by means of a semiconductor substrate moving device (14), wherein filtering an air in the semiconductor substrate moving device (14) is conducted so that an amount of organic materials which adhere onto a surface of the semiconductor substrate (15) during a process to the second treatment step is set to 1 ng/cm2 or less.