| 摘要 |
PROBLEM TO BE SOLVED: To suppress abnormal electric discharge during sputtering, to prevent the formation and mixing of particles into a formed film, and further to effectively reduce or prevent target crack, or the like, during sputtering. SOLUTION: This Ni-P alloy sputtering target has a composition consisting of 12-24at% P, <=100 wt.ppm oxygen, and the balance Ni with inevitable impurities. The sputtering target can be manufactured by melting an Ni-P alloy ground metal of <=10 wt.ppm oxygen content, atomizing the resultant molten alloy in an inert-gas atmosphere to form an Ni-P alloy atomized powder of <=100μm average particle size, and then applying hot press(HP) or hot isostatic press(HIP) to the powder.
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