Method for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited silicon

摘要

A method for controlling the morphology of deposited silicon on a layer of silicon dioxide and semiconductor devices incorporating such deposited silicon are provided. The method comprises the steps of: providing a layer of silicon dioxide; implanting hydrogen ions into the layer of silicon dioxide by plasma source ion implantation; and forming a layer of polycrystalline silicon on the layer of silicon dioxide.