| 摘要 |
A method for controlling the output power of the magnetron generator, where the method and apparatus defines an ignition power level that ensures that the magnetron generator provides a minimal level of power that will ignite the plasma and not result in a detrimental impedance mismatch between the magnetron and an applicator of a remote plasma source. When the user of the wafer processing system requests a power level (i.e., a requested power level) that is below this ignition level, the ignition level is used to ignite the plasma and the output power of the magnetron is gradually decreased to the requested power level. The decrease is performed within a predetermined time period.
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