| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel semiconductor laser which can reduce threshold current with a low cost by effectively suppressing the diffusion of an injecting current in a horizontal direction. SOLUTION: An active layer 1, a light confinement layer and a reflection structure for initiating laser oscillation are formed on a substrate 5, the upper light confinement layer is made a ridge structure, a part of a compound semiconductor on the substrate 5 is made as a semi-insulating layer through impurity diffusion, and the region of the active layer 1 is set to be positioned directly under the ridge structure. Additionally, an active layer 1, a light confinement layer, and a reflection structure for initiating laser oscillation are formed on the substrate 5, the upper and lower reflection structures having the active layer 1 disposed pinchingly therebetween to form a multilayered reflecting mirror, the upper multilayered reflecting mirror is made to have a projected structure whose top surface is parallel to the substrate surface, a part of a compound semiconductor on the substrate 5 is formed as a semi-insulating layer through impurity diffusion, and the region of the active layer 1 is set directly under the upper multilayered reflecting mirror. |
