发明名称 MANUFACTURING APPARATUS AND METHOD OF SILICON OXIDE FILM
摘要 PROBLEM TO BE SOLVED: To realize a manufacturing device and a method, where a silicon oxide film large in area and highly uniform in quality can be formed. SOLUTION: A silicon oxide film manufacturing device is equipped with a substrate-holding means which vacuum-chucks a substrate 1 and a heating means which heats the substrate 1. In this case, the substrate-holding means has a plurality of suction grooves 5, 6, and 7, and the grooves 5, 6, and 7 can each be set adjustable in level of suction vacuum.
申请公布号 JP2000311894(A) 申请公布日期 2000.11.07
申请号 JP19990120716 申请日期 1999.04.27
申请人 NEC CORP 发明人 MATSUMOTO TAKU
分类号 H01L21/31;H01L21/316;(IPC1-7):H01L21/316 主分类号 H01L21/31
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