Gallium phosphide green light-emitting device

摘要

A GaP green light-emitting diode includes an n-type GaP single-crystal substrate on which is formed at least an n-type GaP layer, a nitrogen-doped n-type GaP layer and a nitrogen-doped p-type GaP layer. The concentration of carbon and/or sulfur in the nitrogen-doped n-type GaP layers is controlled to be not more than 6x1015 cm-3.