CMOS INVERTER AND STANDARD CELL USING THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent voids caused by electro-migration in a CMOS inverter. SOLUTION: A power source wiring 11 is connected to the source of a p- channel MOS transistor TR1 via a first contact 12, and a ground wiring 13 is connected to the source of an n-channel MOS transistor TR2 via a second contact 14. One end of a first output signal line 15 is connected to the drain of the p-channel MOS transistor TR1 via a third contact 16, while the other end connected to the drain of the n-channel MOS transistor TR2 via a fourth contact 17. One end of a second output signal line 18 is connected to the fourth contact 17, while the other end extends toward an inverter output end. A first path of an input signal line 19 is connected to a gate electrode 20 of the p- channel MOS transistor TR1 via a fifth contact 21, while a second path is connected to a gate electrode 20 of the n-channel MOS transistor TR2 via a sixth contact 22.