发明名称 VERTICAL HEAT TREATMENT FURNACE AND METHOD FOR HEAT TREATING SEMICONDUCTOR WAFER USING IT
摘要 PROBLEM TO BE SOLVED: To prevent slip of a semiconductor wafer by heating a furnace body with a heating means, containing a vertical wafer port mounting table in the furnace body, and varying inclination of the mounting table by means of a plane control mechanism. SOLUTION: A vertical heat treatment furnace comprises a furnace body being heated with a heating means, a table 4 for mounting a vertical wafer port B being contained in the furnace body, and a plane control mechanism 5 for carrying inclination of the mounting table 4. The mounting table 4 is set on a rotary base 6 and the inclining direction and angle are varied with respect to a fulcrum mechanism 7 trough action of the plane control mechanism 5. The vertical wafer port B has three posts Bp, for example, a supporting groove Bc made in the post Bp, and a ring-like supporting member Br being supported in the supporting groove Bc. The plane control mechanism 5, e.g. three air cylinders 8, and three rod-like actuators 9 being driven to advance or retract by means of the air cylinder 8 are disposed on the rotary base 6 and the actuators 9 abut against the rear surface 4r of the mounting table 4 through an idle insertion hole 10 made in the rotary base 6.
申请公布号 JP2000311866(A) 申请公布日期 2000.11.07
申请号 JP19990120552 申请日期 1999.04.27
申请人 TOSHIBA CERAMICS CO LTD 发明人 TAKESAKO KENICHI
分类号 H01L21/22;(IPC1-7):H01L21/22 主分类号 H01L21/22
代理机构 代理人
主权项
地址