FUSE STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method and structure for generating a void fuse structure on a gate conductor stack. SOLUTION: A semiconductor substrate is provided, wherein a gate conductor stack 32 is provided on a shallow trench isolation region. Oxide layers 33 and 34 are formed on a substrate around the gate conductor stack 32, and an electric contact opening part etched to the substrate down to the oxide layer is filled with a first conductive material 40, establishing electric contact to the gate conductor stack. A conductive layer 41 of a second conductive material is allowed to stick to the oxide layer and the electric contact, and the oxide layer is anisotropically etched so that at least one etching hole, as far as the shallow trench isolation region through the oxide layer, is formed. A part 60 around the least the etching hole of the oxide layer is isotropically etched to form a void under at least a part of a conductive player pattern. The gate conductor stack comprises a fuse.