| 摘要 |
PROBLEM TO BE SOLVED: To increase fabrication yield of nonvolatile semiconductor elements, i.e., capacitor elements comprising an Ir film or a composite film of IrO2/Ir, by providing a film for preventing oxidation and deposition of a lower electrode between a ferroelectric film and the lower electrode thereby suppressing deposition of IrO2. SOLUTION: A lower electrode 2 is formed of an Ir film on a substrate 1, and a deposition preventive film 3 for preventing deposition of lower electrode material and oxidizing the lower electrode uniformly is formed on the lower electrode 2 by subjecting SrTi0.9Nb0.1O3(STNO) to heat treatment for crystallization, for example. Subsequently, a ferroelectric film 4, for example, structured of layered bismuth compound, SrBi2(Ta1-xNbx)2O9 (0<=x<=1) (SBT) is formed on the deposition preventive film 3, and an upper electrode 5 is formed thereon. The deposition preventive film 3 can prevent uneven oxidation of Ir composing the lower electrode 2 and phenomenon where IrO2 is deposited on an SBT film during heat treatment for crystallization. |
