| 摘要 |
PROBLEM TO BE SOLVED: To generate a replaced anisotropic magnetic field in an interface by making the lattice constant of an antiferromagnetic layer larger than that of a ferromagnetic layer, and then heat-treating, so that a crystal structure of the antiferromagnetic layer is transformed to a regular phase. SOLUTION: A 111 surface of a fixed magnetic layer 3 is preferentially oriented in a direction parallel to a film surface. In the case where an antiferromagnetic layer 4 is formed out of X-Mn alloy (where X is one or two kinds of elements out of Pt, Pd, Ir, Rh, Rn and Os), and further it is formed on the fixed magnetic layer 3, when the composition ratio of the element X of the X-Mn alloy is formed in a range of 47-57 at%, difference between the lattice constant before thermal expansion and that of the fixed magnetic layer 3 is made large. Consequently, an interface structure between the fixed magnetic layer 3 and the antiferromagnetic layer 4 is kept in a non-conforming state before thermal treatment. When a thermal treatment is performed in this state, a crystal structure of the antiferromagnetic layer 4 is transformed from a face- centered cubic lattice of disordered lattice to a regular lattice of LI0 type face- centered cubic lattice, and a replaced anisotropic magnetic field of 400 Oe (oersted) or more is obtained. |
