| 摘要 |
PROBLEM TO BE SOLVED: To eliminate etching treatment with the gas in a reaction chamber flowing in a biased direction by adjusting timing for generating a plasma and that for supplying and unloading the gas regardless of the combination of a film to be etched and the etching gas. SOLUTION: The inside of a reaction chamber 201 is set to a specific low- pressure state by an exhaust system and a substrate 208 is arranged on a power electrode 203, and a silicon film being masked in a specific shape is formed on the substrate 208. Further, CF4 and O2 are supplied into the reaction chamber 201 at a flow rate of 50 and 45 sccm, respectively, and the pressure in each reaction chamber is set to 100 mTorr by the exhaust system. The supply of the etching gas into the reaction chamber is stopped, at the same time a high-frequency voltage with 500 W is applied from a power supply 205 to the power electrode 203 for generating a plasma and for starting etching. After the plasma is generated for a fixed amount of time, the power supply 205 is disconnected and at the same time the etching gas is supplied and the gas in the reaction chamber is purged.
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