发明名称 |
FERROELECTRIC RANDOM ACCESS MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To maintain the voltage difference between a first bit line and a second bit line, that is, a sensing margin constant even when power noise is generated during a read-out operation by simultaneously moving voltages on first and second bit lines and a plate line at the time of the generation of power noise. SOLUTION: A power node N1 supplying a power source voltage VCC to a first reference voltage supplying circuit 160 and a power node N2 supplying the power source voltage VCC to a second plate line driver are connected short as much as possible. Moreover, a power node N3 supplying the power source voltage VCC to a second reference voltage supplying circuit and a power node N4 supplying the power source voltage VCC to a first plate line driver 130 are connected short as much as possible. When power noise is generated during the read-out operation, a voltage on a bit line BLO-T receives an influence with the capacitor coupling structure of the voltage supplying circuit 160 and the sensing margin is secured.
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申请公布号 |
JP2000311482(A) |
申请公布日期 |
2000.11.07 |
申请号 |
JP20000074297 |
申请日期 |
2000.03.16 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SAI MUNKEI;JEON BYUNG-GIL |
分类号 |
G11C14/00;G11C11/22;(IPC1-7):G11C11/22 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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