发明名称 FERROELECTRIC RANDOM ACCESS MEMORY
摘要 PROBLEM TO BE SOLVED: To maintain the voltage difference between a first bit line and a second bit line, that is, a sensing margin constant even when power noise is generated during a read-out operation by simultaneously moving voltages on first and second bit lines and a plate line at the time of the generation of power noise. SOLUTION: A power node N1 supplying a power source voltage VCC to a first reference voltage supplying circuit 160 and a power node N2 supplying the power source voltage VCC to a second plate line driver are connected short as much as possible. Moreover, a power node N3 supplying the power source voltage VCC to a second reference voltage supplying circuit and a power node N4 supplying the power source voltage VCC to a first plate line driver 130 are connected short as much as possible. When power noise is generated during the read-out operation, a voltage on a bit line BLO-T receives an influence with the capacitor coupling structure of the voltage supplying circuit 160 and the sensing margin is secured.
申请公布号 JP2000311482(A) 申请公布日期 2000.11.07
申请号 JP20000074297 申请日期 2000.03.16
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SAI MUNKEI;JEON BYUNG-GIL
分类号 G11C14/00;G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C14/00
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