Semiconductor memory device having stack-type memory cells and a method for manufacturing the same

摘要

At least one dummy storage node is formed for a plurality of storage nodes provided in stack type memory cells in which a plate electrode is grounded through the at least one dummy storage node, thereby charges flowed into the plate electrode being discharged, when dry etching is performed by using charged particles, thus preventing electrical stress from acting on a capacitor dielectric film provided between the storage nodes and the plate electrode.