| 摘要 |
A silicon monocrystalline substrate (10) is provided with a piezoelectric element formed by a thin film process, and a plurality of pressure generating chambers 12 is arranged in high density by anisotropic etching. A narrow part (13) and a communicating part (14) are sealed by a sealing plate (20) which has a coefficient of linear expansion which does not exceed twice that of the silicon monocrystalline substrate. A common ink chamber (31) is provided with the sealing plate (20) as one surface and a thin wall (41) forms at least a part of the surface which is opposite to the sealing plate.
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