| 摘要 |
PROBLEM TO BE SOLVED: To enable the stacked capacitor lower electrodes of a dynamic semiconductor memory device(DRAM) to be reduced in insulating properties between them. SOLUTION: Stacked capacitor lower electrodes 7 of the memory cells of a dynamic semiconductor semiconductor memory device(DRAM) are patterned, and an insulating oxide film 9 is filled into a gap between the lower electrodes 7 to be flush with the top surface of the lower electrode 7, and then a rugged polysilicon (HSG-Si) 7a is formed on the top surfaces of the lower electrodes 7. |
