| 摘要 |
PROBLEM TO BE SOLVED: To obtain a light emitting diode by growing a lower distributed AlGaAs Bragg reflector layer on a substrate and an upper distributed AlGaInP Bragg reflector layer on the reflector layer through a first clad layer. SOLUTION: After a lower first distributed AlGaAs Bragg reflector layer 3 is grown on a GaAs substrate 2, a lower n-type AlGaInP clad layer 4 is grown on the layer 3. Then an upper second distributed AlGaInP Bragg reflector layer 5 is grown on the clad layer 4. An active layer 6, an upper p-type AlGaInP clad layer 7, and a GaInP window layer 8 are successively grown on the reflector layer 5. In addition, an ohmic p-electrode 9 is provided on the window layer 8 and, at the same time, an ohmic n-electrode 1 is provided on the rear surface of the GaAs substrate 2. |
