| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, with which the threshold voltage of a transistor can be controlled easily and a punch-through breakdown can be prevented. SOLUTION: This semiconductor device manufacturing method contains a process, wherein a LOCOS oxide film 3 is formed on a P-type silicon substrate 1 and a gate oxide film 7 is formed on the P-type silicon substrate 1, a process where a P-type source shield diffused layer 11 is formed on the substrate 1, a gate electrode 13 is formed on the gate oxide film 7, a gate electrode 13 is formed on one side of the source shield diffused layer 11 and a gate electrode 13 is formed on the other side of the LOCOS oxide film, a process where an N-type source diffusion layer 17 and a drain diffused layer 19 are formed on the substrate 1 on both sides of the gate electrode 13, and one side of the source diffused layer 17 is formed partially overlapping on the source shield diffusion layer 11.
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