发明名称 Chemically amplified photoresist composition
摘要 A chemically amplified photoresist composition, having a large etching resistance and excellent adhesion and contrast characteristics, includes a polymer represented by formula (1): wherein R1 is hydrogen, -OH, -COOH, or aliphatic hydrocarbon having a C1-C20 polar functional group, R2 is a t-butyl group, a tetrahydropyranyl group or a 1-alkoxyethyl group, l, m and n are integers, l/(l+m+n) equals 0.0 to 0.4, m/(l+m+n) equals 0.5, n/(l+m+n) equals 0.1 to 0.5, and the weight average molecular weight of the polymer is in the range of 3,000 to 100,000.
申请公布号 US6143466(A) 申请公布日期 2000.11.07
申请号 US19990399164 申请日期 1999.09.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, SANG-JUN
分类号 H01L21/027;C08F210/14;C08F222/06;C08K5/16;C08K5/17;C08K5/42;G03F7/004;G03F7/039;(IPC1-7):G03C1/73;G03F7/029;G03F7/033 主分类号 H01L21/027
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