| 摘要 |
A dual-port memory includes a dummy memory cell associated with a dummy output line and with a precharge transistor, the output of the dummy cell being at "0". A dummy read transistor is turned on by the active state of the read selection signal and connects the output of the dummy cell to the dummy output line. Circuitry is provided for turning on the output transistors of the memory when the state of the dummy output line reaches a predetermined switching threshold of an inverter.
|
