| 摘要 |
A process is disclosed for reducing the crystallization temperature of amorphous or partially crystallized ceramic films by providing a higher pressure under which the crystallization of the amorphous or partially crystallized ceramic films can be significantly enhanced. The present invention not only improves quality, performance and reliability of the ceramic films, but also reduces the cost for production. By lowering the crystallization temperature, the cost for thermal energy consumed during the crystallization process is greatly reduced. In addition, the interaction or interdiffusion occurring between films and substrates is significantly suppressed or essentially prevented, avoiding the off-stoichiometry and malfunction of thin films, which usually occur in the conventional high-temperature crystallization processes. The process of present invention also decreases the grain size of formed films, thus reducing the roughness of films and producing relatively smooth, good quality films. This process made possible the fabrication of ceramic films with larger area at substantially lower temperatures without using other excitation energy such as laser, ion beam or electron beam, and is applicable to very large scale integrated circuit technologies. The present invention finds broad applications including manufacturing electronic and optical devices such as ferroelectric memories, capacitors, actuators, piezoelectric transducers, pyroelectric sensors, gas-sensors, electro-optic displays, electro-optic switching, non-liner optical devices, and reflective/antireflective coating, etc.
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