发明名称 WASHING LIQUID AND MANUFACTURE OF SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To eliminate a resist residue without dissolving the conductive layer of a buried film or a wiring layer even in the case of borderless wiring by specifying the hydrogen ion concentration of water-soluble washing liquid containing condensation ammonium phosphate that becomes a main constituent, urea that becomes an auxiliary substance or the modification constituent of the urea, and acid. SOLUTION: A resist residue 22a is eliminated by a washing liquid that contains condensation ammonium that becomes a main constituent, urea that becomes an auxiliary substance or the modification constituent of the urea, and acid and that has a hydrogen ion concentration of 10-4 mol/l or more, namely a pH value of 4 or less. The acid to be added as an adjustor for adjusting the pH value of the washing liquid may be nitric acid or sulfuric acid but is preferably phosphoric acid in terms of washing effect and the solubility of a wiring material and is especially preferably orthophosphoric acid. By using the washing liquid, even if borderless wiring is generated and the surface of a buried metal film 14 is partially exposed, the buried metal film 14 and a second wiring layer 20 cannot be essentially dissolved into the washing liquid.
申请公布号 JP2000311879(A) 申请公布日期 2000.11.07
申请号 JP19990121225 申请日期 1999.04.28
申请人 MITSUBISHI ELECTRIC CORP;KISHIMOTO SANGYO CO LTD 发明人 SUGANO ITARU;MURANAKA MASASHI;YAMAMOTO HIROMASA
分类号 H01L21/306;C11D7/08;C11D7/16;C11D7/32;C11D11/00;G03F7/42;H01L21/02;H01L21/311;H01L21/3213;(IPC1-7):H01L21/304 主分类号 H01L21/306
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