Chemical vapor deposition apparatus

摘要

A source gas delivery system 4 which delivers the source gas to the surface of the heated substrate 20 is furnished with a gas delivery guide 44 of a shape such that the distance from the substrate 20 becomes narrower either gradually on in steps from the edge of the gas delivery port 443 on the same axis as the substrate 20 toward the outer edge, and delivers the source gas in such a way that the thickness distribution of the boundary layer which is the region in the vicinity of the surface of the substrate 20 where the velocity of the flow of source gas along the surface of the substrate is essentially zero is almost constant or gradually becomes narrower in the direction of the flow.