| 发明名称 |
Ultra-thin oxide for semiconductors |
| 摘要 |
A semiconductor device having a transistor or capacitor with an ultra-thin oxide, which is thinner than 10 angstrom in thickness, is manufactured by eliminating a gate oxidation step in the processing and using the polysilicon reoxidation step to create the ultra-thin gate oxide by diffusion after formation of the gate.
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| 申请公布号 |
US6144063(A) |
申请公布日期 |
2000.11.07 |
| 申请号 |
US19980047951 |
申请日期 |
1998.03.25 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YEAP, GEOFFREY CHOH-FEI;KRIVOKAPIC, ZORAN;LIN, MING-REN |
| 分类号 |
H01L21/28;H01L21/336;H01L29/423;(IPC1-7):H01L29/72 |
主分类号 |
H01L21/28 |
| 代理机构 |
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