发明名称 ESD bus lines in CMOS IC's for whole-chip ESD protection
摘要 In this invention, a new whole-chip ESD protection scheme with the ESD buses has been proposed to solve the ESD protection issue of the CMOS IC having a large number of separated power lines. Multiple ESD buses, which are formed by the wide metal lines, have been added into the CMOS IC having a large number of separated power lines. The bi-directional ESD-connection cells are connected between the separated power lines and the ESD buses, but not between the separated power lines. The ESD current on the CMOS IC with more separated power lines are all conducted into the ESD buses, therefore the ESD current can be conducted by the ESD buses away from the internal circuits and quickly discharged through the designed ESD protection devices to ground. By using this new whole-chip ESD protection scheme with the ESD buses, the CMOS IC having more separated power lines can be still safely protected against ESD damages.
申请公布号 US6144542(A) 申请公布日期 2000.11.07
申请号 US19980210954 申请日期 1998.12.15
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 KER, MING-DOU;CHANG, HUN-HSIEN
分类号 H01L27/02;(IPC1-7):H02H3/22 主分类号 H01L27/02
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