| 摘要 |
A field emission display and method of fabricating same in which the emitters are fabricated on a polysilicon layer that is deposited on top of a relatively thick oxide insulating layer. The polysilicon layer extends into gaps formed in the insulating layer to make contact with a conductive layer deposited on a nonconductive substrate. Because of the spacing between the substrate and the polysilicon layer provided by the insulating layer, the conductive layer can extend beneath the emitters to periodically make contact with the polysilicon layer through spaced-apart gaps in the insulating layer. A thin oxide insulating layer is formed over the polysilicon layer, and a second polysilicon layer is then deposited over the thin oxide layer to form an extraction grid.
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