发明名称 |
Red, infrared, and blue stacked laser diode array by wafer fusion |
摘要 |
An infrared laser structure is stacked on top of a red laser structure with both having an inverted or p-side down orientation. The red/infrared stack laser structure is inverted and wafer fused to a blue laser structure to form a red/infrared/blue monolithic laser structure. The top semiconductor layer of the inverted red/infrared stack laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.
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申请公布号 |
US6144683(A) |
申请公布日期 |
2000.11.07 |
申请号 |
US19980004176 |
申请日期 |
1998.01.07 |
申请人 |
XEROX CORPORATION |
发明人 |
FLOYD, PHILIP D. |
分类号 |
H01S5/02;H01S5/343;H01S5/40;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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