METHOD FOR FORMING INSULATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an insulation layer of semiconductor device is provided to form an insulation layer having a superior insulation characteristic and a superior repeatability. CONSTITUTION: In a method for forming an insulation layer of GaN layer(106) on a substrate, a substrate is prepared to form an insulation layer. AlN(aluminum nitride) layer(104) having a predetermined thickness is formed on the substrate by a sputtering process. GaN layer(106) is formed on the AlN layer(104) by CVD(Chemical Vapor Deposition). The insulation layer(110) to be enlarged is formed on the substrate. Thereby, an insulation layer having superior insulation characteristic and superior repeatability can be formed.