发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE, MANUFACTURE OF ELECTRO-OPTICAL DEVICE, SEMICONDUCTOR DEVICE AND THE ELECTRO-OPTICAL DEVICE
摘要 PROBLEM TO BE SOLVED: To improve a semiconductor device or an electro-optical device having a thin film transistor without alignment deviation, even when the thin film is formed in a microscopic state. SOLUTION: A liquid crystal device, which is an example of an electro-optical device, is provided with a TFT 30 on a TFT array substrate 10, a data line 6a, a scanning line 3a, a second capacitor electrode 3b, and a pixel electrode 9a. The pixel electrode and the TFT are electrically connected through two contact holes 8a and 8b relayed by a conductive layer 80a. The second insulating thin film 81 is pinched by the second capacitor electrode and a part of the conductive layer, and the second storage capacitor is constituted. The second insulating thin film is composed of the scanning line and the oxide film of the second capacitor electrode.
申请公布号 JP2000312005(A) 申请公布日期 2000.11.07
申请号 JP20000027111 申请日期 2000.02.04
申请人 SEIKO EPSON CORP 发明人 MURAIDE MASAO
分类号 H01L21/8242;G02F1/136;G02F1/1368;H01L21/336;H01L27/108;H01L29/786 主分类号 H01L21/8242
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