发明名称 BROAD BANDWIDTH HIGH FREQUENCY AMPLIFIER HAVING MULTI-LAYER STRUCTURE
摘要 PURPOSE: A broad bandwidth high frequency amplifier having a multi-layer structure is provided to amplify various frequencies without manufacturing a plurality of packages. CONSTITUTION: A broad bandwidth high frequency amplifier comprises a dry diode, a first dielectric waveguide, a resonance circuit, a third dielectric waveguide, and a strip resonator. The dry diode is located between two metal plates. The first dielectric waveguide is engaged with a circulator, and transfers a wave inputted from an inputting end to the circulator. The second dielectric waveguide is engaged with the circulator, and transfers the signals inputted from the circulator to the dry diode, and transfers the amplified signal to the circulator. The third dielectric waveguide is engaged with the circulator, and transfers the amplified signal inputted from the circulator to an outputting section. The amplifier comprises a strip resonator which connects the dry diode to the dielectric waveguide.
申请公布号 KR20000063110(A) 申请公布日期 2000.11.06
申请号 KR19990027341 申请日期 1999.07.07
申请人 SENSING TECH. CO.;SHIN, CHUN WOO 发明人 SHIN, CHUN WOO
分类号 H01P1/32;H01P1/203;H01P7/08;(IPC1-7):H01P1/32 主分类号 H01P1/32
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