发明名称 |
CHEMICAL VAPOR DEPOSITION SYSTEM AND METHOD |
摘要 |
A chemical vapor deposition (CVD) system is provided for processing a substrate (110). The system (100) includes a heater muffle (115), a chamber (120) having an injector assembly (130) for introducing chemical vapor to process the substrate (110), and a belt (105) for moving the substrate throu gh the muffle and chamber. The belt (105) has an oxidation-resistant coating (175) to reduce formation of deposits thereon. The coating (175) is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating (175) comprises a securely-adhered oxide layer (185) that is substantially free of transition metals. Preferably, the oxidation-resistant coating (175) comprises aluminum oxide. More preferably, the coating (175) comprises an aluminum oxide layer (185) securely adhered over a nickel aluminide layer (180).
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申请公布号 |
CA2371353(A1) |
申请公布日期 |
2000.11.02 |
申请号 |
CA20002371353 |
申请日期 |
2000.03.03 |
申请人 |
SILICON VALLEY GROUP THERMAL SYSTEMS LLC |
发明人 |
BAILEY, ROBERT J.;MICHAEL, LISA H.;KANE, THOMAS E. |
分类号 |
B05D3/10;B01J19/00;C23C10/48;C23C16/44;C23C16/54;C23C28/00;C23C30/00;(IPC1-7):C23C16/00 |
主分类号 |
B05D3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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