发明名称 CHEMICAL VAPOR DEPOSITION SYSTEM AND METHOD
摘要 A chemical vapor deposition (CVD) system is provided for processing a substrate (110). The system (100) includes a heater muffle (115), a chamber (120) having an injector assembly (130) for introducing chemical vapor to process the substrate (110), and a belt (105) for moving the substrate throu gh the muffle and chamber. The belt (105) has an oxidation-resistant coating (175) to reduce formation of deposits thereon. The coating (175) is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating (175) comprises a securely-adhered oxide layer (185) that is substantially free of transition metals. Preferably, the oxidation-resistant coating (175) comprises aluminum oxide. More preferably, the coating (175) comprises an aluminum oxide layer (185) securely adhered over a nickel aluminide layer (180).
申请公布号 CA2371353(A1) 申请公布日期 2000.11.02
申请号 CA20002371353 申请日期 2000.03.03
申请人 SILICON VALLEY GROUP THERMAL SYSTEMS LLC 发明人 BAILEY, ROBERT J.;MICHAEL, LISA H.;KANE, THOMAS E.
分类号 B05D3/10;B01J19/00;C23C10/48;C23C16/44;C23C16/54;C23C28/00;C23C30/00;(IPC1-7):C23C16/00 主分类号 B05D3/10
代理机构 代理人
主权项
地址