| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical amplification type resist material capable of enhancing resolution and to produce a semiconductor device while precisely obtaining a fine pattern. SOLUTION: The chemical amplification type resist material 3 containing a base resin, a photo-acid generating agent and a cationic polyelectrolyte is applied on a substrate 1, heat-treated and developed with an aqueous alkali solution to form a positive type resist pattern 5. The molecular weight of the cationic polyelectrolyte is preferably 500-500,000, the polyelectrolyte is preferably a halide of polyvinylpyridine and the preferred amount is 0.1-5% of the amount of the base resin. |
