| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a memory circuit that can normally read data even when a supply voltage is dropped. SOLUTION: The memory circuit is equipped with a memory cell 4 that consists of a selection transistor 5 and a memory transistor 6, a supply voltage detection circuit 100 that detects a supply voltage, a boost voltage detection circuit 200 that controls boost operation in a boost circuit 300 for generating a boost voltage VPP based on the detection result of the supply voltage detection circuit 100 and the booster voltage VPP, and a boost circuit 300 that generates the boost voltage VPP for applying to a word line WL via a high- voltage switch 1200 when the supply voltage is dropped to a threshold or less while data is being read from the memory cell 4.</p> |
