Group III nitride compound semiconductor light-emitting device

摘要

A buffer layer of aluminum nitride (AlN) about 25 nm thick is provided on a sapphire substrate. An n<+> layer of a high carrier density, which is about 4.0 mu m thick and which is made of GaN doped with silicon (Si), is formed on the buffer layer. An intermediate layer of non-doped InxGa1-xN (0 layer. Then, an n-type clad layer of GaN about 250 ANGSTROM thick is laminated on the intermediate layer. Further, three well layers of Ga0.8In0.2N about 30 ANGSTROM thick each and two barrier layers of GaN about 70 ANGSTROM thick each are laminated alternately on the n-type clad layer to thereby form a light-emitting layer of a structure with two multilayer quantum well (MQW) cycles.